Fraunhofer Institute Introduces 23.4 Procent Efficient N-type Solar Cell
29 September 2009 | Solar Power | 1 Comment
The famous German research and technology center, the Fraunhofer Institute for Solar Energy Systems, have managed to make a breakthrough in the field of Photovoltaics, achieving a remarkable conversion efficiency of 23,4 procent, by creating a thin p-type semiconductor layer on an n-type semiconductor substrate.
With a size of 2 by 2 cm, the new silicon-based solar cell promises to be one of the most efficient yet and has a great potential to be produces on a mass-scale, the researchers said.
Former research conducted at the Fraunhofer Institute showed that p-type semiconductors are not functioning properly with Silicon Oxide or Silicon Nitride used as sealing layer materials, so that most of today’s silicon solar cells are produced by creating a n-type semiconductor layer on a p-type semiconductor substrate, a top of which a Silicon Oxide or Silicon Nitride layer is coated.
So, the researchers had to come up with a better material to surface the upper most layer, that which first comes in contact with the sun’s rays, in order to have build more efficient solar cells. Their work in examining different substances have led them to using aluminum oxide (Al2O3) as a sealing layer material. By solving the issue of sealing, the scientists have proved that a solar cell based on an n-type semiconductor substrate can be developed successfully.
Tags: breakthrough, conversion efficiency, Fraunhofer Institute, n-type, p-type, research, sealing layer materials, semiconductor, silicon, solar cell, substrate
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